Abstract: Two-transistor-zero-capacitor (2T0C) DRAM cell has been proposed and extensively investigated as a memory device for processing-in-memory (PIM) applications. In this two-part article, we ...
Abstract: This is first demonstrated using a full 3-D approach, where a global model includes a part of a solar cell with a textured surface. Due to device complexity, many of them cannot be simulated ...
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